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triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 1 product description the triquint TGA2503-SM is a ku-band packaged power amplifier. the TGA2503-SM operates from 12.5-16 ghz and is designed using triquints proven standard 0.5-um power phemt production process. the TGA2503-SM typically provides 32 dbm of saturated output power with small signal gain of 32 db. the TGA2503-SM is ideally suited for the vsat ground terminal market and point- to-point radio. evaluation boards are available upon request. lead-free and rohs compliant primary applications ? ku-band vsat ? point-to-point radio 32 dbm ku-band amplifier TGA2503-SM measured performance bias conditions: vd = 6 v, idq = 600 ma key features ? typical frequency range: 12.5 - 16 ghz ? 32 dbm nominal psat ? 32 db nominal gain ? 37 dbm output toi @ pin = -20dbm ? 8 db typical return loss ? bias conditions: vd = 6v, idq = 600 ma (id = 1200ma under rf drive) ? package dimensions: 4.0 x 4.0 x 0.9 mm note: this device is early in the characterization process prior to finalizing all electrical specifications. specifications ar e subject to change without notice. 20 22 24 26 28 30 32 34 12.5 13 13.5 14 14.5 15 15.5 16 frequency (ghz) saturated output power (dbm) -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 32 36 12.51313.51414.51515.516 frequency (ghz) gain (db) -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 return loss (db) gain input output
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 2 TGA2503-SM table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 8 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current 1.3 a 2/ | i g | gate supply current 18 ma p in input continuous wave power 21 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ 5 / t m mounting temperature (30 seconds) 260 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: pd(max) = (150 c C tbase c) / 11.7 ( c/w) 4/ these ratings apply to each individual fet. 5/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 3 table ii rf characterization table (t a = 25 q c, nominal) bias conditions: vd = 6v, idq = 600ma symbol parameter test condition nominal * units gain small signal gain f = 12.5 C 16 ghz 32 db irl input return loss f = 12.5 C 16 ghz 10 db orl output return loss f = 12.5 C 16 ghz 8 db nf noise figure f = 12.5 C 16 ghz 9 db psat saturated output power f = 12.5 C 16 ghz f = 13.75 C 14.5 ghz 31 32 dbm toi third order intercept @ pin = -20dbm f = 12.5 C 16 ghz 36 dbm table iii thermal information parameter test condition t ch ( q c) r t jc ( q c/w) mttf (hrs) r q jc thermal resistance (channel to package) v d = 6 v i d = 600 ma p diss = 3.6 w 127 11.7 7.9 e+6 note: backside of package is at 85 c baseplate temperature. worst case is at saturated output power when dc power consumption rises to 7.2 w with 1.5 w rf power delivered to load. power dissipated is 5.7 w and the temperature rise in the channel is 67 c. baseplate temperature must be reduced to 83 c to remain below the 150 c maximum channel temperature. TGA2503-SM * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 4 measured performance* bias conditions: vd = 6 v, idq =600 ma -20 -16 -12 -8 -4 0 4 8 12 16 20 24 28 32 36 11 12 13 14 15 16 17 18 frequency (ghz) gain (db) -32 -28 -24 -20 -16 -12 -8 -4 0 4 8 12 16 20 24 return loss (db) gain input output 6 7 8 9 10 11 12 13 14 12 13 14 15 16 17 18 frequency (ghz) noise figure (db) TGA2503-SM * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 5 0 4 8 12 16 20 24 28 32 36 40 11 12 13 14 15 16 17 18 frequency (ghz) gain (db) -40c 25c 70c -30 -27 -24 -21 -18 -15 -12 -9 -6 -3 0 11 12 13 14 15 16 17 18 frequency (ghz) input return loss (db) -40c 25c 70c -14 -13 -12 -11 -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 11 12 13 14 15 16 17 18 frequency (ghz) output return loss (db) -40c 25c 70c measured performance bias conditions: vd = 6 v, idq =600 ma TGA2503-SM * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 6 20 22 24 26 28 30 32 34 12 13 14 15 16 17 18 frequency (ghz) saturated output power (dbm) measured performance bias conditions: vd = 6 v, idq = 600 ma 0 5 10 15 20 25 30 35 -16 -12 -8 -4 0 4 8 12 16 input power (dbm) pout (dbm) & gain (db) 500 600 700 800 900 1000 1100 1200 1300 1400 drain current (ma) @ 14 ghz pout gain id TGA2503-SM * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded.
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 7 20 22 24 26 28 30 32 34 36 38 12 13 14 15 16 17 18 frequency (ghz) output toi (dbm) @ pin/tone= -20dbm measured performance bias conditions: vd = 6 v, idq =600 ma TGA2503-SM * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. -60 -54 -48 -42 -36 -30 -24 -18 -12 -6 0 6 12 18 6 8 10 12 14 16 18 20 22 24 26 28 30 output power/tone (dbm) im3 (dbm) 12 ghz 13 ghz 14 ghz 15 ghz 16 ghz 17 ghz
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 8 pin description 1, 2, 4, 5, 6, 7, 9, 11, 13, 14, 15, 17, 18, 20, 22, 24 n/c 3 rf input 8vg1 10 vg2 12 power ref 16 rf output 19 vd2 21 vd1 23 ref 25 gnd bottom view top view dot indicates pin 1 package pinout diagram TGA2503-SM tga 2503 date code lot code
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 9 mechanical drawing gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. TGA2503-SM ? ? [?pp *urxqg3dg 3,1,' %rwwrp9lhz 7rohudqfh 8qlwvpp
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 10 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. * this layout shows the tuning configuration used to obtain the measured data. the layout configuration may vary depending on the specific application. pcb is ro4003 8 mil thickness, 0.5 oz standard copper cladding, with er = 3.38. recommended board layout assembly * units: mils TGA2503-SM 9g 9 s) s) 9g a9wrrewdlq p$gudlqfxuuhqw s) s) 7xqlqj6wxe 7x
triquint semiconductor texas: phone (972)994-8465 fax (972)994-8504 email: info-mmw@tqs.com web: www.triquint.com advance product information march 4, 2005 11 ordering information part package style TGA2503-SM qfn 24l 4x4 surface mount recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alcohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste can be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 C 120 sec @ 140 C 160 c 60 C 180 sec @ 150 C 200 c time above melting point 60 C 150 sec 60 C 150 sec max peak temperature 240 c260 c time within 5 c of peak temperature 10 C 20 sec 10 C 20 sec ramp-down rate 4 C 6 c/sec 4 C 6 c/sec TGA2503-SM

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